Rambus Ups Memory for Unforgettable Mobile Data Speed

By Contributor Wireless and Mobile News on February 2, 2009 10:56 AM

Rambus has launced a Mobile Memory Initiative. This development effort focuses on high-bandwidth, low-power memory technologies targeted at achieving data rates of 4.3Gbps at best-in-c

lass power efficiency.

With that kind of promised performance, designers could realize more than 17Gigabytes per second of memory bandwidth from a single mobile DRAM device, notes their news release.

Consumers can expect High Definition video, multi-megapixel digital still cameras, 3D games, and media-rich web applications from such fast smartphones/devices.

Rambus has combined its high-bandwidth expertise with power-efficient signaling technology to create key innovations for its Mobile Memory Initiative, such as:

Very Low-Swing Differential Signaling - combines the robust signaling qualities of a differential architecture with innovative circuit techniques to greatly reduce active power consumption;
FlexClocking Architecture - a clock-forwarded and clock-distributed topology, enables high-speed operation and a simplified DRAM interface; and
Advanced Power State Management - in conjunction with the FlexClocking architecture, provides fast switching times between power-saving modes and delivers optimized power efficiency across a diverse range of usage profiles.

"As consumer expectations grow for more media-rich applications on their mobile devices, new memory solutions will be needed to keep pace with the rapidly increasing bandwidth requirements," said Martin Scott, senior vice president of Research and Technology Development at Rambus. "With the breakthrough technologies developed through the Mobile Memory Initiative, Rambus enables a broad range of advanced mobile applications that will enrich the lives of consumers worldwide."

Building on innovations pioneered through the development of the award-winning XDR memory architecture, and through the Low-Power and Terabyte Bandwidth Initiatives, Rambus' Mobile Memory Initiative also incorporates key innovations such as FlexPhase and Microthreading technology. For nearly 19 years, Rambus engineering teams have developed leadership innovations that enable faster signaling and lower power. Committed to the advanced research, development, and implementation of high-performance and power-efficient memory architectures, Rambus invests in advanced circuit design, high-speed logic interfaces, system engineering, signal and power integrity, verification, and testing. Rambus engineers and scientists have developed innovations resulting in over 1200 issued and pending patents worldwide.